存储类
SPI
CM25G01S：
The CM25G01S (1G-bit) Serial SLC NAND Flash Memory provides a storage solution for systems
with limited space, pins and power.
The CM25G01S SpiFlash family incorporates the popular SPI interface and the traditional large NAND
non-volatile memory space.
They are ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI (XIP) and
storing voice, text and data.
The device operates on a single 2.7V to 3.6V power supply with current consumption as low as 25mA
active and 10µA for standby.
All CM25G SpiFlash family devices are offered in space-saving packages which were impossible to
use in the past for the typical NAND flash memory.
The CM25G01S 1G-bit memory array is organized into 65,536 programmable pages of 2,048-bytes
each.
The entire page can be programmed at one time using the data from the 2,048-Byte internal buffer.
Pages can be erased in groups of 64 (128KB block erase). The CM25G01S has 1,024 erasable blocks.
CM25G01S：
The CM25G01S supports the standard Serial Peripheral Interface (SPI), Dual/Quad I/O SPI: Serial
Clock, Chip Select, Serial Data I/O0 (DI), I/O1 (DO), I/O2 (/WP), and I/O3 (/HOLD). SPI clock
frequencies of up to 104MHz are supported allowing equivalent clock rates of 208MHz (104MHz x 2)
for Dual I/O and 416MHz (104MHz x 4) for Quad I/O when using the Fast Read Dual/Quad I/O
instructions.
The CM25G01S provides a new Continuous Read Mode that allows for efficient access to the entire
memory array with a single Read command. This feature is ideal for code shadowing applications.
A Hold pin, Write Protect pin and programmable write protection, provide further control flexibility.
Additionally, the device supports JEDEC standard manufacturer and device ID, one 2,048-Byte
Unique ID page, one 2,048-Byte parameter page and ten 2,048-Byte OTP pages. To provide better
NAND flash memory manageability, user configurable internal ECC, bad block management are also
available in CM25G01S.
CM25G01S：
New CM25G Family of SpiFlash Memories
– CM25G01S: 1G-bit / 128M-byte
– Standard SPI: CLK, /CS, DI, DO, /WP, /Hold
– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold
– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3
– Compatible SPI serial flash commands
Highest Performance Serial NAND Flash
– 104MHz Standard/Dual/Quad SPI clocks
– 208/416MHz equivalent Dual/Quad SPI
– 50MB/S continuous data transfer rate
– Fast Program/Erase performance
– More than 100,000 erase/program cycles(4)
– More than 10-year data retention
Efficient “Continuous Read Mode”(1)
– Alternative method to the Buffer Read Mode
– No need to issue “Page Data Read” between Read commands
– Allows direct read access to the entire array Low Power, Wide Temperature Range
– Single 2.7 to 3.6V supply
– 25mA active, 10µA standby current
– -40°C to +85°C operating range Flexible Architecture with 128KB blocks
– Uniform 128K-Byte Block Erase
– Flexible page data load methods Advanced Features
– On chip 1-Bit ECC for memory array
– ECC status bits indicate ECC results
– bad block management and LUT(2) access
– Software and Hardware Write-Protect
– Power Supply Lock-Down and OTP protection
– 2KB Unique ID and 2KB parameter pages
– Ten 2KB OTP pages(3)
Space Efficient Packaging
– 8-pad WSON 8x6-mm
– 16-pin SOIC 300-mil
– 24-ball TFBGA 8x6-mm
